What's New
| 04/06/2025 | Two authored papers will be presented in The 15th International Conference on Nitride Semiconductors (ICNS 15) (July 6-11, 2025, Malmö, Sweden). | |
| 30/05/2025 | English version and Chinese version of the press release of fabrication of GaN HEMTs on a 2-inch polycrystalline diamond substrate are available. | |
| 01/04/2025 | Member list updated. | |
| 14/03/2025 | Three authored papers are presented in The 72nd JSAP Spring Meeting 2025 (March 14-17, 2025, Noda) [in Japanese]. | |
| 11/03/2025 | Sumitomo Electric and Osaka Metropolitan University announced that a nitride epitaxial layer was successfully bonded to a 2-inch polycrystalline diamond substrate and GaN HEMTs were fabricated under the support of A-STEP of JST (Press Release in Japanese). | |
| 15/11/2024 | Three authored papers were presented in The 35th International Photovoltaic Science and Engineering Conference (PVSEC-35) (Nov. 10-15, Numazu, Japan). | |
| 01/11/2024 | Chiharu Moriyama, a graduate-school student in our research group, received Best Poster Presentation Award in LTB-3D 2024. | |
| 17/10/2024 | 2024 8th International Workshop on Low Temperature Bonding for 3D Integration (LTB-3D 2024), for which Prof. Shigekawa serves as steering committee chair, will be held in Nara, Japan, between Oct. 30 and Nov. 1, 2024. Six authored and two coauthored papers will be presented. | |
| 17/10/2024 | An invited talk entitled "Surface activated bonding as promising wafer process technologies for creating novel advanced devices" will be given in 19th International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT 2024), which will be held in Taipei, Taiwan between Oct. 22 and 25, 2024. | |
| 17/10/2024 | Six authored papers were presented in The 85 JSAP Autumn Meeting 2024 (Sept. 16-20, 2024, Niigata and Online) [in Japanese]. | |
| 01/10/2024 | Member list updated. | |
Message
Our research group was kicked out in Graduate School of Engineering of
Osaka City University in Oct. 2011 for proposing and demonstrating concepts
of novel semiconductor devices with higher efficiency and output power,
lower loss, and more tolerance against harsh environment as essential parts
for achieving "Sustainable Development Goals" (SDGs) and realizing
greener society. We have been working on solar cells composed of mechanically-stacked
subcells, or hybrid tandem solar cells, widegap semiconductor/narrow gap
semicoductor heterojunctions, so-called "X-on-diamond" structures
for lowering thermal resistance of devices, thick-metal-film based lower-loss
interconnects and higher-Q passive components for monolithic integration,
and solar cells with luminescent down-shifting materials. We are proceeding
on research by developing and integrating all aspects of relevant technologies
(semiconductor device fabrication, characterization,and so on) in combination
with fundamental sciences such as physics and electronics. We have belonged
to Graduate School of Engineering of Osaka Metropolitan University since
April 2022.
We announce with sincere gratitude that we receive supports from a large
number of institutes and companies. In particular we thank to JSPS-Kakenhi,
Feasibility Study Program and "Development of high performance and
reliable PV modules to reduce levelized cost of energy" Project of
New Energy and Industrial Technology Development Organization (NEDO) as
well as Adaptable and Seamless Technology Transfer Program through Target
Driven R&D (A-STEP) and Core Research for Evolutional Science and Technology
(CREST) Program of Japan Science and Technology Agency (JST) for their
financial supports.
N. Shigekawa
