What's New
| 22/04/2024 | Prof. Shigekawa gives an invited talk in Workshops of 2024 IEEE Wireless Power Technology Conference and Expo (WPTCE2024) (May 8, 2024, Kyoto, Japan). | |
| 01/04/2024 | Member list updated. | |
| 31/03/2024 | Two authored and two coauthored papers were presented in The 71st JSAP Spring Meeting 2024 (March 22-25, 2024, Tokyo and Online) [in Japanese]. | |
| 21/01/2024 | Our laboratory moved to Building B7 in Nakamozu campus of OMU. (Postal address: 1-1, Gakuen-cho, Naka-ku, Sakai, Osaka 599-8531, Japan) | |
| 21/01/2024 | Prof. Shigekawa gave an invited talk in 15th Meeting of R032 Committee on Crystal Growth for Industrial Innovation, University-Industry Cooperative Committees of Japan Society for the Promotion of Science (Jan. 11-12, 2024, Hybrid, Japan) [in Japanese]. | |
| 21/12/2023 | Our achievements related to GaN-on-diamond HEMTs were press-released in Japanese and English formats, and featured in newspapers (The Nikkei and The Nikkan Kogyo Shimbun) [in Japanese]. | |
| 18/12/2023 | Prof. Shigekawa gave an invited talk in 14th Meeting of The Japan Society of Wide Gap Semiconductors (WideG) (Dec. 14-15, 2023, Okinawa, Japan) [in Japanese]. | |
| 18/12/2023 | Dr. Jianbo Liang gave an invited talk in The 9th International Forum on Wide Bandgap Semiconductors (Nov. 27-30, 2023, Xiamen, China). |
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| 05/10/2023 | Prof. Shigekawa gives an invited talk in 2023 MRS Fall Meeting (Nov. 26-Dec. 1, 2023, Boston, USA). | |
| 05/10/2023 | One contributed paper entitled "Fabrication of nitride/3C-SiC/polycrystalline diamond heterostructures for efficient thermal management of power devices" is presented in ICNS 14 (Nov. 12-17, 2023, Fukuoka, Japan). | |
| 05/10/2023 | Dr. Jianbo Liang gives an invited talk entitled "Integrating GaN with diamond for power devices with efficient thermal management" in International Microsystems, Packaging, Assembly and Circuits Technology Conference (IMPACT) 2023 (Oct. 25-27, 2023, Taipei, Taiwan). | |
| 05/10/2023 | One contributed paper entitled "Fabrication and Electrical Characterization of GaAs/GaN Junctions" is presented in 244th ECS Meeting (Oct. 8-12, 2023, Gothenburg, Sweden). |
Message
Our research group was kicked out in Graduate School of Engineering of
Osaka City University in Oct. 2011 for proposing and demonstrating concepts
of novel semiconductor devices with higher efficiency and output power,
lower loss, and more tolerance against harsh environment as essential parts
for achieving "Sustainable Development Goals" (SDGs) and realizing
greener society. We have been working on solar cells composed of mechanically-stacked
subcells, or hybrid tandem solar cells, widegap semiconductor/narrow gap
semicoductor heterojunctions, so-called "X-on-diamond" structures
for lowering thermal resistance of devices, thick-metal-film based lower-loss
interconnects and higher-Q passive components for monolithic integration,
and solar cells with luminescent down-shifting materials. We are proceeding
on research by developing and integrating all aspects of relevant technologies
(semiconductor device fabrication, characterization,and so on) in combination
with fundamental sciences such as physics and electronics. We have belonged
to Graduate School of Engineering of Osaka Metropolitan University since
April 2022.
We announce with sincere gratitude that we receive supports from a large
number of institutes and companies. In particular we thank to JSPS-Kakenhi,
Feasibility Study Program and "Development of high performance and
reliable PV modules to reduce levelized cost of energy" Project of
New Energy and Industrial Technology Development Organization (NEDO) as
well as Adaptable and Seamless Technology Transfer Program through Target
Driven R&D (A-STEP) and Core Research for Evolutional Science and Technology
(CREST) Program of Japan Science and Technology Agency (JST) for their
financial supports.
N. Shigekawa